Related Experiment Video
Updated: Jun 3, 2026
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Coupling-barrier and non-parabolicity effects on the conduction electron cyclotron effective mass and Landé [Formula:
J Darío Perea1, J R Mejía-Salazar, N Porras-Montenegro
1Departamento de Física, Universidad del Valle, AA 25360 Cali, Colombia.
Abstract:
We have performed a theoretical study of the effects of the non-parabolicity and coupling barrier in between GaAs quantum wells on the conduction electron cyclotron effective mass and Landé [Formula: see text] factor under the action of a growth-direction applied magnetic field. Numerical calculations are performed within the effective mass approximation and taking into account the non-parabolicity effects for the conduction-band electrons, by means of the Ogg-McCombe effective Hamiltonian. The system consists of two GaAs quantum wells connected by a Ga(1 - x)Al(x)As barrier and surrounded by Ga(1 - y)Al(y)As material. We have found that both the [Formula: see text] factor and the cyclotron effective mass are sensitive to the coupling strength, that is the height and width of the barrier in between the GaAs quantum wells. This behavior is similar for every Landé [Formula: see text] factor and the cyclotron effective mass calculated for different Landau levels. It is noticeable that the splitting between the [Formula: see text] and [Formula: see text] cyclotron effective mass increases with the central barrier width and the growth-direction applied magnetic field. As in a single quantum well, we found that the electron Landé [Formula: see text] factor increases with the growth-direction applied magnetic field, comparing quite well with the experimental reports, and that the magnetic field plays an important role in decoupling the quantum wells of the system. Additionally, we have studied the electron cyclotron effective mass and Landé g factor as functions of the Landau levels, depending on the non-parabolicity. From this result one can infer that their population must be taken into account for a complete study of the band parameters as has been proposed in previous works. The present theoretical results are in very good agreement with previous experimental reports in the limiting geometry of a single quantum well.
Related Concept Videos
01:24Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
01:27¹H NMR: Long-Range Coupling
In alkenes, spin information is communicated via σ–π overlap, as seen in allylic (four-bond) and homoallylic (five-bond) couplings. These coupling interactions are stronger when the σ bond is parallel to the alkene π orbitals.
01:20Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
01:12Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
01:28Debye–Huckel–Onsager Conductance Equation
01:22Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...