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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Published on: July 24, 2015

Controlling inelastic light scattering quantum pathways in graphene.

Chi-Fan Chen¹, Cheol-Hwan Park, Bryan W Boudouris

¹Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA.

|March 18, 2011

Summary

This summary is machine-generated.

Researchers controlled inelastic light scattering pathways in graphene using electrostatic doping. Blocking some pathways unexpectedly amplified Raman intensity, revealing quantum interference and hot-electron luminescence in doped graphene.

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Area of Science:

Condensed Matter Physics
Materials Science
Spectroscopy

Background:

Inelastic light scattering spectroscopy is vital for studying elementary excitations in materials.
Intermediate electronic states act as crucial quantum pathways in inelastic light scattering.
Controlling these pathways offers new avenues for manipulating light-matter interactions.

Purpose of the Study:

To achieve excitation pathway control in graphene via electrostatic doping.
To investigate quantum interference effects in graphene's Raman scattering.
To explore hot-electron luminescence as a form of inelastic light scattering in doped graphene.

Main Methods:

Utilized electrostatic doping to control excitation pathways in graphene.
Employed inelastic light scattering spectroscopy to observe Raman intensity.
Analyzed hot-electron luminescence phenomena in heavily doped graphene.

Main Results:

Demonstrated quantum interference between different Raman pathways in graphene.
Observed a dramatic increase in one-phonon Raman intensity when pathways were blocked.
Showcased hot-electron luminescence in graphene when Fermi energy approached half the laser excitation energy.

Conclusions:

Pathway control via electrostatic doping provides new insights into resonance Raman scattering in graphene.
The study reveals unexpected quantum interference phenomena influencing Raman intensity.
Hot-electron luminescence is identified as a significant inelastic light scattering process in heavily doped graphene.