A review of strain analysis using electron backscatter diffraction
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Updated: Jun 3, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Stuart I Wright1, Matthew M Nowell, David P Field
1EDAX-TSL, 392 East 12300 South, Draper, UT 84020, USA. stuart.wright@ametek.com
Abstract:
Since the automation of the electron backscatter diffraction (EBSD) technique, EBSD systems have become commonplace in microscopy facilities within materials science and geology research laboratories around the world. The acceptance of the technique is primarily due to the capability of EBSD to aid the research scientist in understanding the crystallographic aspects of microstructure. There has been considerable interest in using EBSD to quantify strain at the submicron scale. To apply EBSD to the characterization of strain, it is important to understand what is practically possible and the underlying assumptions and limitations. This work reviews the current state of technology in terms of strain analysis using EBSD. First, the effects of both elastic and plastic strain on individual EBSD patterns will be considered. Second, the use of EBSD maps for characterizing plastic strain will be explored. Both the potential of the technique and its limitations will be discussed along with the sensitivity of various calculation and mapping parameters.
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