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In2O3 nanocrystal memory with the barrier engineered tunnel layer.

Dong Uk Lee1, Seon Pil Kim, Dong Seok Han

  • 1Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea.

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|March 31, 2011
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Indium oxide (In2O3) nanocrystal memory devices were created using engineered silicon nitride/silicon oxide (ONO) tunnel layers. These devices demonstrate a 1.4 V memory window, showcasing potential for advanced non-volatile memory applications.

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Area of Science:

  • Materials Science
  • Nanoscience
  • Electrical Engineering

Background:

  • Development of advanced non-volatile memory technologies is crucial for next-generation electronics.
  • Indium oxide (In2O3) nanocrystals offer promising charge storage properties for memory devices.
  • Engineered tunnel layers are essential for controlling charge transport and device performance.

Purpose of the Study:

  • To fabricate and characterize In2O3 nanocrystal memory devices utilizing barrier-engineered tunnel layers.
  • To investigate the impact of silicon dioxide/silicon nitride/silicon dioxide (ONO) tunnel layers on memory performance.
  • To evaluate the charge storage mechanism and memory window characteristics of the fabricated devices.

Main Methods:

  • Fabrication of In2O3 nanocrystal memory devices on a p-type silicon substrate.
  • Utilized a stacked silicon dioxide/silicon nitride/silicon dioxide (ONO) tunnel layer structure (2/2/3 nm).
  • Characterized In2O3 nanocrystal formation via reaction between indium thin film and BPDA-PDA polyimide.
  • Analyzed charge transport mechanism (Fowler-Nordheim tunneling) and measured memory window under specific programming/erasing conditions.

Main Results:

  • Successfully fabricated In2O3 nanocrystal memory devices with an equivalent oxide thickness of 5.64 nm for the ONO tunnel layers.
  • Achieved an average In2O3 nanocrystal size of 8 nm with a density of 4 x 10^11 cm^-2.
  • Demonstrated a memory window of approximately 1.4 V under programming (12 V for 1 s) and erasing (-15 V for 200 ms) conditions.

Conclusions:

  • The barrier-engineered ONO tunnel layers effectively facilitate Fowler-Nordheim tunneling for charge storage in In2O3 nanocrystal memory.
  • The fabricated In2O3 nanocrystal memory devices exhibit a significant memory window, indicating good data retention and read/write capabilities.
  • This study highlights the potential of In2O3 nanocrystals and engineered tunnel dielectrics for developing robust non-volatile memory solutions.