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Updated: Jun 3, 2026
Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate
Published on: September 28, 2019
Improved oxygen diffusion barrier properties of ruthenium-titanium nitride thin films prepared by plasma-enhanced
Seong-Jun Jeong1, Doo-In Kim, Sang Ouk Kim
1Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea.
Abstract:
Ru-TiN thin films were prepared from bis(ethylcyclopentadienyl)ruthenium and tetrakis(dimethylamino)titanium using plasma-enhanced atomic layer deposition (PEALD). The Ru and TiN were deposited sequentially to intermix TiN with Ru. The composition of Ru-TiN films was controlled precisely by changing the number of deposition cycles allocated to Ru, while fixing the number of deposition cycles allocated to TiN. Although both Ru and TiN thin films have a polycrystalline structure, the microstructure of the Ru-TiN films changed from a TiN-like polycrystalline structure to a nanocrystalline on increasing the Ru intermixing ratio. Moreover, the electrical resistivity of the Ru0.67-TiN0.33 thin films is sufficiently low at 190 microomega x cm and was maintained even after O2 annealing at 750 degrees C. Therefore, Ru-TiN thin films can be utilized as a oxygen diffusion barrier material for future dynamic (DRAM) and ferroelectric (FeRAM) random access memory capacitors.
