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Published on: April 8, 2018
Memory effects of nonvolatile memory devices with a floating gate fabricated utilizing Ag nanoparticles embedded into
Won Tae Kim1, Dong Yeol Yun, Jae Hun Jung
1Department of Electronics and Communications Engineering, Hanyang University, 17 Haengdang-Dong, Seongdong-Gu, Seoul 133-791, Korea.
Journal of Nanoscience and Nanotechnology
|March 31, 2011
Summary
Silver nanoparticles embedded in polymethylmethacrylate (PMMA) function as charge storage in nonvolatile memory devices. Higher silver nanoparticle concentration enhances the memory device
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Nonvolatile memory devices are crucial for data storage.
- Exploring novel materials for charge storage is an active research area.
- Polymethylmethacrylate (PMMA) is a versatile polymer for device fabrication.
Purpose of the Study:
- To fabricate and characterize nonvolatile memory devices using silver nanoparticles in a PMMA matrix.
- To investigate the charge storage capabilities of silver nanoparticles within the PMMA layer.
- To understand the operating mechanisms of these memory devices.
Main Methods:
- Fabrication of memory devices using spin coating technique.
- Characterization using High-Resolution Transmission Electron Microscopy (HRTEM).
- Electrical characterization via Capacitance-Voltage (C-V) measurements at 300 K.
Main Results:
- Silver nanoparticles were successfully embedded and distributed within the PMMA layer.
- Capacitance-Voltage (C-V) curves exhibited hysteresis, confirming charge storage by silver nanoparticles.
- A significant flat-band voltage shift was observed, increasing with higher silver nanoparticle concentration.
Conclusions:
- Silver nanoparticles in PMMA are effective charge storage elements for nonvolatile memory.
- The concentration of silver nanoparticles directly influences the memory device performance.
- The study provides insights into the writing and erasing mechanisms based on C-V characteristics.
