Ion-implantation studies on perpendicular media.
Nikita Gaur1, Siegfried L Maurer, Ronald W Nunes
1Electrical and Computer Engineering (ECE) Department, Information Storage Materials Laboratory (ISML), National University of Singapore (NUS), Singapore 117576, Singapore.
Journal of Nanoscience and Nanotechnology
|April 1, 2011
Summary
Ion implantation in perpendicular recording media affects magnetic properties. High doses of 12C+ ions alter magnetization reversal and coercivity in granular and continuous media.
Area of Science:
- Materials Science
- Physics
Background:
- Perpendicular recording media are crucial for high-density data storage.
- Understanding ion implantation effects is key to optimizing magnetic recording media performance.
Purpose of the Study:
- To investigate the impact of 12C+ ion implantation on the magnetic and structural properties of granular and continuous perpendicular recording media.
- To analyze how different ion fluences affect magnetization reversal mechanisms and coercivity.
Main Methods:
- Investigated effects of 12C+ ion implantation at doses of 2 x 10(11), 10(13), 10(14), and 10(16) ions/cm2.
- Examined magnetic and structural properties of both granular and continuous media.
Main Results:
- The highest ion fluence (10(16) ions/cm2) altered magnetization reversal mechanisms, reducing coercivity in perpendicular recording media.
- In continuous media, ion implantation increased pinning defects, leading to higher coercivity.
- High-dose implantation induced similar crystallographic changes in both granular and continuous media.
Conclusions:
- Ion implantation, particularly at high fluences, significantly modifies the magnetic behavior of perpendicular recording media.
- The study highlights dose-dependent effects on coercivity and structural properties, offering insights for media design.
