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Room temperature ferromagnetism in Co-incorporated TiO2 thin films
Sudesh Sharma1, Sujeet Chaudhary, N Panwar
1Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.
Journal of Nanoscience and Nanotechnology
|April 1, 2011
Summary
Room temperature ferromagnetism was observed in cobalt-incorporated titanium dioxide thin films. This phenomenon, attributed to the bound magnetic polaron model, shows potential for advanced magnetic applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Room temperature ferromagnetism (RTFM) is a sought-after property for technological applications.
- Dilute magnetic semiconductors offer potential for achieving RTFM.
- Titanium dioxide (TiO2) is a promising host material for dilute magnetic semiconductors.
Purpose of the Study:
- To investigate the possibility of achieving RTFM in cobalt-incorporated titanium dioxide thin films.
- To explore the structural and magnetic properties of Co-doped TiO2 thin films.
- To determine the origin of ferromagnetism in these materials.
Main Methods:
- Thin films of Ti(1-x)Co(x)O2 (x = 0.05) were prepared using spray pyrolysis.
- X-ray diffraction (XRD) was used to analyze the crystalline phases.
- SQUID magnetometry was employed to measure magnetic properties at room temperature.
- Electrical resistivity was measured to understand charge transport.
Main Results:
- Nano-crystalline Co-incorporated TiO2 thin films exhibited ferromagnetism at room temperature.
- The anatase phase was dominant, with rutile developing after vacuum annealing.
- No cobalt metal peaks were detected by XRD, ruling out metallic clusters.
- Saturation magnetization increased from 5.6 to 11.8 emu/cm3 after vacuum annealing.
- High electrical resistivity (> 10^8 Ω-cm) was observed.
Conclusions:
- The prepared Co-doped TiO2 thin films demonstrate room temperature ferromagnetism.
- The observed RTFM is attributed to the bound magnetic polaron (BMP) model.
- These findings suggest potential for Co-doped TiO2 in spintronic devices.
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