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Published on: December 21, 2015
Size-dependent oriented attachment in the growth of pure and defect-free hexagonal boron nitride nanocrystals
1College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, People's Republic of China.
Abstract:
Pure and defect-free hexagonal boron nitride (hBN) nanocrystals with deep-ultraviolet light emissions at around 215 nm were prepared via a solid state reaction. This involved preparing a precursor from potassium borohydride and ammonium chloride powders, and then heating the precursor and additional ammonium chloride to 1000 °C within a nitrogen atmosphere. The hBN nanocrystals were studied using a variety of characterization techniques (e.g., TEM, AFM, N(2) absorption/desorption). A growth mechanism based on size-dependent oriented attachment was proposed for the nanocrystals.
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