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High extinction ratio 10 Gbit/s silicon optical modulator.

Gilles Rasigade1, Melissa Ziebell, Delphine Marris-Morini

  • 1Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS, Orsay, France.

Optics Express
|April 1, 2011
PubMed
Summary
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This study demonstrates a high-speed silicon optical modulator. The device achieves a high extinction ratio and low optical loss, crucial for advanced optical communication systems.

Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Silicon photonics is a key technology for high-speed optical communication.
  • Carrier depletion modulators offer potential for high performance.
  • Mach Zehnder interferometers are common modulator structures.

Purpose of the Study:

  • To experimentally demonstrate a high-speed silicon optical modulator.
  • To achieve a high extinction ratio and low optical loss.
  • To utilize carrier depletion in a Mach Zehnder interferometer design.

Main Methods:

  • Fabrication of a silicon optical modulator.
  • Integration of a PIPIN diode as a phase-shifter.
  • Design of a Mach Zehnder interferometer structure.

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Main Results:

  • Experimental demonstration of a silicon optical modulator.
  • Achieved 8.1 dB extinction ratio at 10 Gbit/s.
  • Simultaneous low optical loss of 6 dB.

Conclusions:

  • The demonstrated silicon optical modulator meets key performance metrics.
  • Carrier depletion is an effective mechanism for high-speed modulation.
  • The device shows promise for future optical communication applications.