Related Experiment Video
Updated: Jun 3, 2026
14:58
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Compact single-chip VMUX/DEMUX on the silicon-on-insulator platform
Dazeng Feng1, Ning-Ning Feng, Cheng-Chih Kung
1Kotura Inc., 2630 Corporate Place, Monterey Park, California 91754, USA. dfeng@kotura.com
Optics Express
|April 1, 2011
Summary
We developed a compact silicon photonic device integrating a grating and variable optical attenuator for 40-channel dense wavelength division multiplexing. This single-chip solution offers fast, precise signal control for optical networks.
Area of Science:
- Photonics
- Integrated Optics
- Optical Communications
Background:
- Dense Wavelength Division Multiplexing (DWDM) is crucial for increasing optical network capacity.
- Variable Optical Attenuators (VOAs) are essential components for signal power management in DWDM systems.
- Integration of optical components on silicon platforms offers miniaturization and cost-effectiveness.
Purpose of the Study:
- To demonstrate a compact, single-chip 40-channel DWDM Variable Attenuator Multi/Demultiplexer (VMUX/DEMUX).
- To leverage monolithic integration of an echelle grating and p-i-n VOA on a silicon-on-insulator (SOI) platform.
Main Methods:
- Monolithic integration of an echelle grating and a high-speed p-i-n VOA on an SOI platform.
- Fabrication of a 40-channel VMUX/DEMUX device.
Main Results:
- Achieved a compact device with dimensions of 25 mm by 10 mm.
- Demonstrated a flat-top filter shape with low on-chip loss (5.0 dB).
- Obtained low Polarization Dependent Loss (PDL) of 0.3 dB after compensation for Polarization Dependent Frequency (PDF) shift.
- Exhibited a fast attenuation response speed of 3 MHz.
Conclusions:
- The demonstrated single-chip VMUX/DEMUX offers a compact and efficient solution for DWDM systems.
- Monolithic integration on SOI enables high-performance optical components with reduced footprint.
- The device's fast response and low PDL are beneficial for dynamic optical network management.
Related Concept Videos
01:22Semiconductors
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
01:22MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
01:16MOSFET
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
01:25MOS Capacitor
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
01:20MOSFET: Depletion Mode
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
01:14Clamper Circuit
A clamper circuit, also known as a DC restorer, represents a specialized variant of the rectifier circuit, notable for its method of taking the output across the diode rather than the capacitor. This configuration lends to several distinctive applications, particularly in handling square wave inputs.
Within this circuit, the diode's orientation prompts the capacitor to charge up to the level of the most negative peak of the input signal. Upon reaching this state, the diode ceases to conduct,...
Within this circuit, the diode's orientation prompts the capacitor to charge up to the level of the most negative peak of the input signal. Upon reaching this state, the diode ceases to conduct,...