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Characteristics of Series Resonant Circuit

Characteristics of Series Resonant Circuit

Series resonance occurs in a circuit containing inductive (L), capacitive (C), and resistive (R) elements connected sequentially. At the resonance frequency, the inductive and capacitive reactances are equal in magnitude but opposite in sign, effectively canceling each other. This causes the circuit's impedance is minimal, primarily determined by the resistance R. The resonant frequency of an RLC circuit is defined as:

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Updated: Jun 3, 2026

Fabrication of Silica Ultra High Quality Factor Microresonators

Fabrication of Silica Ultra High Quality Factor Microresonators

Published on: July 2, 2012

High quality factor etchless silicon photonic ring resonators.

Lian-Wee Luo¹, Gustavo S Wiederhecker, Jaime Cardenas

¹School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA. ll399@cornell.edu

|April 1, 2011

Summary

This summary is machine-generated.

We developed high-quality silicon photonic ring resonators using a novel etchless fabrication method. This technique achieves a high intrinsic quality factor, reducing signal loss for improved photonic device performance.

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Last Updated: Jun 3, 2026

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Area of Science:

Photonics
Materials Science
Nanotechnology

Background:

Silicon photonics enables integrated optical circuits.
Plasma etching is a common fabrication step, but can introduce surface roughness and losses.
Novel fabrication methods are needed to improve device performance.

Purpose of the Study:

To demonstrate etchless fabrication of high quality factor silicon photonic ring resonators.
To achieve ultra-low loss in silicon photonic devices.
To reduce fabrication complexity and cost.

Main Methods:

Fabrication of silicon photonic ring resonators using selective thermal oxidation.
Elimination of plasma etching in the fabrication process.
Design and integration of etchless silicon inverse nanotapers for input/output coupling.

Main Results:

Achieved a high intrinsic quality factor (Q) of 510,000 in 50 µm-radius ring resonators.
Demonstrated a low ring loss of 0.8 dB/cm.
Attained a total chip insertion loss of 2.5 dB.

Conclusions:

The etchless fabrication method enables high-Q silicon photonic ring resonators.
This approach significantly reduces optical losses in silicon photonic devices.
The developed technique offers a promising pathway for advanced integrated photonic circuits.