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Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy
Soo-Hyon Phark1, Hogyoung Kim, Keun Man Song
1Department of Physics, Ewha Womans University, Seoul 120-750, Korea.
Abstract:
We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.
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