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Localization of burn mark under an abnormal topography on MOSFET chip surface using liquid crystal and emission
Scanning
|April 5, 2011
Summary
This study details locating burn marks on MOSFETs using advanced techniques. Scanning electron microscopy (SEM) then visualizes the precise defect location for analysis.
Area of Science:
- Semiconductor device physics
- Materials science
- Failure analysis
Background:
- Abnormal topography on chip surfaces necessitates precise defect localization.
- Surface irregularities can stem from underlying damage or fabrication inconsistencies.
- Accurate fault localization is crucial for effective failure analysis in integrated circuits.
Purpose of the Study:
- To pinpoint the exact location of burn marks on MOSFETs.
- To validate the effectiveness of specific fault localization techniques.
- To enable high-resolution imaging of microscale defects.
Main Methods:
- Utilized liquid crystal thermography and emission microscopy for defect localization.
- Employed surface decoration with hot hydrochloric acid to reveal the burn mark.
- Performed scanning electron microscope (SEM) inspection for high-magnification imaging.
Main Results:
- Successfully localized the defect area using thermography and emission microscopy.
- The burn mark was clearly identified and prepared for imaging.
- SEM provided detailed, three-dimensional images of the burn mark defect.
Conclusions:
- Combined localization techniques effectively identified the burn mark's precise location.
- SEM is a powerful tool for visualizing microscale burn defects in MOSFETs.
- This methodology aids in understanding and mitigating semiconductor failure mechanisms.
