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Published on: October 10, 2016
High-pressure study of lithium azide from density-functional calculations
K Ramesh Babu1, Ch Bheema Lingam, Surya P Tewari
1Advanced Centre of Research in High Energy Materials (ACRHEM), University of Hyderabad, Andhra Pradesh, Hyderabad, India.
This study investigates lithium azide (LiN3) under high pressure, revealing its anisotropic compressibility and mechanical stability. High pressure decreases the band gap, suggesting semiconductor behavior, and influences optical and vibrational properties.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Chemistry
Background:
- Lithium azide (LiN3) is a material with potential applications.
- Understanding its behavior under high pressure is crucial for predicting its properties and stability.
Purpose of the Study:
- To investigate the structural, electronic, optical, and vibrational properties of LiN3 under high pressure.
- To provide theoretical insights into the mechanical stability and high-pressure phase transitions of LiN3.
Main Methods:
- Density Functional Theory (DFT) calculations using plane-wave pseudopotentials.
- Generalized Gradient Approximation (GGA) for exchange-correlation functional.
- Analysis of structural, elastic, electronic, optical, and vibrational properties.
Main Results:
- Calculated lattice parameters and bulk modulus (23.23 GPa) show good agreement with experimental data.
- Anisotropic compressibility observed, with the b-axis being most compressible.
- Mechanical stability confirmed by elastic constants (C33 > C11 > C22), indicating stiffness along the c-axis.
- Electronic band gap decreases with pressure, suggesting a transition towards semiconductor behavior.
- Optical properties (refractive index, absorption, photoconductivity) exhibit anisotropy and shift to higher energies with pressure, implying light-assisted decomposition.
- Lattice modes show a higher pressure response than internal azide ion modes.
Conclusions:
- LiN3 is mechanically stable and exhibits anisotropic compressibility under high pressure.
- High pressure induces semiconductor-like electronic properties and influences optical and vibrational responses.
- Theoretical predictions on elastic constants and high-pressure behavior await experimental validation.
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