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Updated: Jun 2, 2026
12:57
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Nonlinear emission dynamics of a GaAs microcavity with embedded quantum wells
V V Belykh1, V A Tsvetkov, M L Skorikov
1P N Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia. belykh@lebedev.ru
Summary
Excitation density influences polariton emission decay in GaAs microcavities. Additional continuous illumination accelerates polariton relaxation, boosting emission intensity by scattering charge carriers.
Area of Science:
- Solid State Physics
- Optoelectronics
- Quantum Optics
Background:
- Polaritons in semiconductor microcavities are crucial for optoelectronic devices.
- Understanding polariton dynamics under nonresonant excitation is key to controlling light-matter interactions.
Purpose of the Study:
- Investigate the emission dynamics of GaAs microcavities.
- Analyze the influence of excitation density and continuous illumination on polariton behavior.
Main Methods:
- Picosecond-pulse nonresonant excitation of a GaAs microcavity.
- Angle-resolved emission spectroscopy.
- Varying excitation densities and applying continuous wave illumination.
Main Results:
- Lower polariton emission decay time depends on excitation density and polariton wavevector.
- Continuous illumination significantly enhances emission intensity from the lower polariton branch.
- Polariton-polariton and polariton-free carrier scattering are dominant relaxation mechanisms.
Conclusions:
- Polariton relaxation pathways are strongly influenced by excitation conditions.
- Scattering by photogenerated carriers accelerates polariton relaxation to radiative states.
- Negative detunings favor polariton-carrier interactions for state filling.
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