Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Equivalent Capacitance01:19

Equivalent Capacitance

Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
Equivalent Capacitance01:19

Equivalent Capacitance

From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
Capacitors and Capacitance01:18

Capacitors and Capacitance

A device consisting of two electrical conductors that are separated by a distance and used to store electrical charges is called a capacitor. The space between the conductors is either a vacuum or an insulating material, called a dielectric. Capacitors have many applications, ranging from filtering static from radio reception to energy storage in heart defibrillators.
When the conductors are two identical parallel plates, it is called a parallel plate capacitor. When battery terminals are...
Spherical and Cylindrical Capacitor01:26

Spherical and Cylindrical Capacitor

A spherical capacitor consists of two concentric conducting spherical shells of radii R1 (inner shell) and R2 (outer shell). The shells have equal and opposite charges of +Q and −Q, respectively. For an isolated conducting spherical capacitor, the radius of the outer shell can be considered to be infinite.
Conventionally, considering the symmetry, the electric field between the concentric shells of a spherical capacitor is directed radially outward. The magnitude of the field, calculated by...
Capacitor With A Dielectric01:18

Capacitor With A Dielectric

Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Efficient termination of cardiac arrhythmias using optogenetic resonant feedback pacing.

Chaos (Woodbury, N.Y.)·2024
Same author

Editorial: Artificial intelligence to enhance biomechanical modelling.

Frontiers in sports and active living·2023
Same author

Ångstrom-Depth Resolution with Chemical Specificity at the Liquid-Vapor Interface.

Physical review letters·2023
Same author

Photon-electron coincidence experiments at synchrotron radiation facilities with arbitrary bunch modes.

The Review of scientific instruments·2021
Same author

NMR-based Fragment Screening in a Minimum Sample but Maximum Automation Mode.

Journal of visualized experiments : JoVE·2021
Same author

Corrigendum to "The effects of rehabilitation on the biomechanics of patients with athletic groin pain" [J. Biomech. 99 (2020) 109474].

Journal of biomechanics·2020
Same journal

Erratum for the Research Article "Detecting supramolecular organic nanoparticles during heat wave".

Science (New York, N.Y.)·2026
Same journal

Local signals, systemic decline.

Science (New York, N.Y.)·2026
Same journal

The mechanics of liver regeneration.

Science (New York, N.Y.)·2026
Same journal

Computing in a memory with physics.

Science (New York, N.Y.)·2026
Same journal

Retraction.

Science (New York, N.Y.)·2026
Same journal

Making time.

Science (New York, N.Y.)·2026
See all related articles

Related Experiment Video

Updated: Jun 2, 2026

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

Very large capacitance enhancement in a two-dimensional electron system.

Lu Li1, C Richter, S Paetel

  • 1Department of Physics, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139, USA.

Science (New York, N.Y.)
|May 14, 2011
PubMed
Summary
This summary is machine-generated.

Researchers discovered a significant enhancement in gate capacitance in field-effect transistor structures. This finding, observed near electron depletion in LaAlO(3)/SrTiO(3) interfaces, could lead to more efficient, lower-power electronic devices.

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Related Experiment Videos

Last Updated: Jun 2, 2026

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Device Physics

Background:

  • Field-effect transistor (FET) gate capacitance is crucial for developing low-power, high-speed electronics.
  • High-κ dielectrics are actively researched to increase gate capacitance.
  • Many-body effects within electronic systems can also intrinsically enhance capacitance.

Purpose of the Study:

  • To investigate capacitance enhancement beyond conventional dielectric scaling in FETs.
  • To explore the role of many-body effects in the LaAlO(3)/SrTiO(3) interface system.
  • To understand the origin of enhanced gate capacitance at low electron densities.

Main Methods:

  • Fabrication of top-gate electrodes on the LaAlO(3)/SrTiO(3) interface.
  • Electrical characterization to achieve full depletion of interface electrons.
  • Electric-field penetration measurements to probe capacitance origins.

Main Results:

  • A greater than 40% enhancement in gate capacitance was observed near electron depletion.
  • The capacitance enhancement was attributed to the negative compressibility of the interface electron system.
  • The effect was observed at room temperature, low electron densities, and strong disorder.

Conclusions:

  • Many-body effects, specifically negative compressibility, can significantly enhance gate capacitance in 2D electron systems.
  • This phenomenon offers an alternative route to improving FET performance beyond high-κ dielectrics.
  • The findings are relevant for designing next-generation low-power electronics operating under specific conditions.