Related Experiment Video
Updated: Jun 2, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor
Published on: November 11, 2013
A stacked memory device on logic 3D technology for ultra-high-density data storage
Jiyoung Kim1, Augustin J Hong, Sung Min Kim
1Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA.
Abstract:
We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D Flash memory device and vertical integration structure have been successfully developed. The SMOL architecture has great potential to achieve tera-bit level memory density by stacking memory devices vertically and maximizing cell-area efficiency. Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures.
Related Concept Videos
Storage
System of Memory
Understanding Memory
Mnemonic Devices
Acronyms
Acronyms are created by using the initial letters of a series of words to form a new word or phrase. This approach condenses complex information into a single, memorable entity. For example,...

