Defect Engineering for Stabilizing Magnetic and Topological Properties in Mn(Bi1-xSbx)2Te4.
Haonan Chen1, Jiayu Wang1, Huayao Li2
1State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
Controlling antisite defects in manganese bismuth telluride (MnBi2Te4) is key to unlocking its topological quantum states. Optimized synthesis significantly reduces these defects, revealing the material's type-II Weyl semimetal properties.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Materials
Background:
- Manganese bismuth telluride (MnBi2Te4) is a promising material for topological quantum states.
- Antisite defects, particularly Mn-Sb antisites in Mn(Bi1-xSbx)2Te4, hinder its potential.
- Sb substitution, while tuning the Fermi level, can worsen antisite defect formation.
Purpose of the Study:
- To systematically investigate and control antisite defects in Mn(Bi1-xSbx)2Te4.
- To understand the impact of antisite defects on magnetic and topological properties.
- To develop optimized synthesis methods for high-quality Mn(Bi1-xSbx)2Te4 crystals.
Main Methods:
- First-principles calculations to model defect behavior.
- Strategic synthesis using optimized chemical vapor transport (CVT).
- Characterization via Shubnikov-de Haas oscillations and anomalous Hall effect measurements.
Main Results:
- Increasing antisite defects degrade the magnetic Weyl state, leading to trivial magnetic insulating behavior.
- Optimized CVT yields high-quality Mn(Bi1-xSbx)2Te4 with reduced antisite defects.
- Observed Shubnikov-de Haas oscillations and anomalous Hall effect confirm type-II Weyl semimetal nature.
Conclusions:
- Antisite defects critically influence the magnetic and topological properties of Mn(Bi1-xSbx)2Te4.
- Defect engineering through optimized synthesis is essential for realizing exotic magnetic topological states.
- This work provides a pathway to harness the full potential of MnBi2Te4-based materials.
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