Nonlinear I-V relations and hysteresis in solid state devices based on oxide mixed-ionic-electronic conductors
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Updated: Jun 2, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
1Physics Department, Technion-Israel Institute of Technology, Haifa, Israel.
Abstract:
The current-voltage, I-V, relations as well as the defect distributions are calculated for solid state devices in which the acceptors are mobile. The devices are of the metal|oxide|metal (MOM) type, where the oxide is a mixed-ionic-electronic conductor. The electrodes are blocking for material exchange. I-V relations are calculated for cyclic voltammetry, high amplitude ac voltage and low amplitude ac voltage from which the ac impedance is derived. The results exhibit nonlinear I-V relations, energy storage, hysteresis, negative resistance and quasi-switching.
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