Related Experiment Video
Updated: Jun 2, 2026

A Method for Growing Bio-memristors from Slime Mold
Published on: November 2, 2017
Impact of geometry on the performance of memristive nanodevices
Qiangfei Xia1, Matthew D Pickett, J Joshua Yang
1Hewlett-Packard Laboratories, Palo Alto, CA 94304, USA. qxia@ecs.umass.edu
Abstract:
We examined the influence of memristor geometry on switching endurance by comparing ribbed and planar TiO(2)-based cross-point devices with 50 nm × 50 nm lateral dimensions. We observed that planar devices exhibited a factor of over four improvement in median endurance value over ribbed structures for otherwise identical structures. Our simulations indicated that the corners in the upper wires of the ribbed devices experienced higher current density and more heating during device forming and switching, and hence a shorter life time.
More Related Videos
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...

