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Magnetic Field due to Moving Charges

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A stationary charge creates and interacts with the electric field, while a moving charge creates a magnetic field.
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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Fast current-induced domain-wall motion controlled by the Rashba effect.

Ioan Mihai Miron¹, Thomas Moore, Helga Szambolics

¹SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France. mihai.miron.icn@uab.es.

Nature Materials

|May 17, 2011

Summary

Spin-polarized currents enable new memory devices, but permalloy nanowires face reproducibility and stability issues. Combining spin-transfer and spin-orbit torques in cobalt nanowires overcomes these challenges, achieving higher domain wall velocities up to 400 m/s.

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Area of Science:

Spintronics
Materials Science
Nanotechnology

Background:

Magnetic domain wall propagation is key for advanced memory and logic devices.
Permalloy nanowires show high domain wall velocities but suffer from poor reproducibility, difficult depinning, and Walker breakdown limitations.
Current methods struggle to overcome inherent instabilities and achieve reliable domain wall motion.

Purpose of the Study:

To investigate a novel approach for overcoming limitations in magnetic domain wall propagation.
To enhance domain wall velocity and stability in nanowire devices.
To explore the combined effects of spin-transfer and spin-orbit torques in ultrathin cobalt nanowires.

Main Methods:

Fabrication of an ultrathin cobalt nanowire integrated into a trilayer structure with structural inversion asymmetry (SIA).
Application of combined spin-transfer and spin-orbit torques.
Analysis of domain wall depinning, mobility, and structural stability under varying current densities.

Main Results:

The combined torques facilitated domain wall depinning and enhanced mobility.
Structural inversion asymmetry (SIA) stabilized the Bloch domain wall structure via the Rashba field.
Achieved reproducible domain wall velocities up to 400 m s(-1), extending the high-mobility regime.

Conclusions:

The synergistic action of spin-transfer and spin-orbit torques provides a comprehensive solution for reliable magnetic domain wall motion.
This approach overcomes key drawbacks of previous technologies, enabling higher velocities and improved device performance.
The findings pave the way for more robust and efficient spintronic memory and logic devices.