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Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods
G Kunert1, W Freund, T Aschenbrenner
1Institute of Solid State Physics-Semiconductor Epitaxy-University of Bremen, Bremen, Germany. kunert@ifp.uni-bremen.de
Abstract:
We report on the fabrication of a light-emitting diode based on GaN nanorods containing InGaN quantum wells. The unique system consists of tilted N-polar nanorods of high crystalline quality. Photoluminescence, electroluminescence, and spatially resolved cathodoluminescence investigations consistently show quantum well emission around 2.6 eV. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy measurements reveal a truncated shape of the quantum wells with In contents of (15 ± 5)%.
