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Updated: Jun 1, 2026
Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation
Published on: February 25, 2017
Bottom-up photonic crystal cavities formed by patterned III-V nanopillars
Adam C Scofield1, Joshua N Shapiro, Andrew Lin
1Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095, United States. ascofield@ucla.edu
Abstract:
We report on the formation and optical properties of bottom-up photonic crystal (PC) cavities formed by III-V nanopillars (NPs) via catalyst-free selective-area metal-organic chemical vapor deposition on masked GaAs substrates. This method of NP synthesis allows for precise lithographic control of NP position and diameter enabling simultaneous formation of both the photonic band gap (PBG) region and active gain region. The PBG and cavity resonance are determined by independently tuning the NP radius r, pitch a, and height h in the respective masked areas. Near-infrared emission at 970 nm is achieved from axial GaAs/InGaAs heterostructures with in situ passivation by laterally grown InGaP shells. To achieve out-of-plane optical confinement, the PC cavities are embedded in polydimethylsiloxane (PDMS) and removed from the growth substrate. Spatially and spectrally resolved 77 K photoluminescence demonstrates a strong influence of the PBG resonance on device emission. Resonant peaks are observed in the emission spectra of PC cavities embedded in PDMS.
