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Related Experiment Video

Updated: Jun 1, 2026

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis
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Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis

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Hydrogen plasma interaction with (100) diamond surfaces.

Phillip John1, Maria D Stoikou

  • 1School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, UK.

Physical Chemistry Chemical Physics : PCCP
|May 26, 2011
PubMed
Summary

Low-pressure hydrogen plasma treatment significantly smooths polycrystalline diamond films, reducing surface roughness and removing graphitic phases. This process enhances diamond surface quality for potential applications.

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Plasma Physics

Background:

  • Polycrystalline diamond films are crucial for various applications due to their unique properties.
  • Surface morphology and chemical composition significantly influence diamond film performance.
  • Controlled surface modification is essential for optimizing diamond-based technologies.

Purpose of the Study:

  • To investigate the effects of low-pressure hydrogen plasma on the surface topography and chemistry of (100)-oriented polycrystalline diamond films.
  • To quantify changes in surface roughness, etch rates, and surface functional groups.
  • To assess the removal of graphitic phases and surface oxygen content.

Main Methods:

  • Exposure of (100)-oriented diamond films to low-pressure hydrogen plasma for up to 20 hours.

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Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
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Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

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Last Updated: Jun 1, 2026

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis
14:11

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis

Published on: March 29, 2016

Treating Surfaces with a Cold Atmospheric Pressure Plasma using the COST-Jet
06:36

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Published on: November 2, 2020

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
08:48

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Published on: November 9, 2015

  • Atomic Force Microscopy (AFM) for surface topography imaging and roughness analysis.
  • High-resolution X-ray Photoelectron Spectroscopy (XPS) for surface chemical composition analysis.
  • Optical Emission Spectroscopy (OES) and Mass Spectrometry (MS) for detecting etching products.

    • Main Results:

    • Mean surface roughness of (100) crystallites decreased from approximately 2.4 nm to below 1 nm.
    • Low lateral etch rates of 28 ± 4 nm/h were measured for crystallites bounded by (111) planes.
    • Surface graphitic phases were removed to below detectable limits.
    • Surface oxygen content decreased from 9-10% to approximately 3%.
    • The ratio of ether to carbonyl functional groups on the surface changed from 83:17 to 64:37.

    Conclusions:

    • Low-pressure hydrogen plasma is effective in smoothing (100)-oriented polycrystalline diamond surfaces.
    • The plasma treatment successfully removes detrimental graphitic phases and reduces surface oxygen content.
    • The observed changes indicate a significant improvement in diamond surface quality, potentially enhancing its suitability for advanced applications.