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Picometer-Precision Atomic Position Tracking through Electron Microscopy

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Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission

David Hernández-Maldonado¹, Miriam Herrera, Pablo Alonso-González

¹Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro, s/n, 11510 Puerto Real, Cádiz, Spain. david.hernandez@uca.es

Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada

|May 28, 2011

Summary

This study demonstrates atomic-resolution elemental mapping of InxGa1-xAs multilayers using aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The results accurately map indium distribution, supporting existing segregation models.

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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

Area of Science:

Materials Science
Nanotechnology
Solid State Physics

Background:

Characterizing the elemental composition of semiconductor heterostructures is crucial for understanding their electronic properties.
Accurate compositional profiling at the atomic scale is challenging but essential for advanced material design.

Purpose of the Study:

To demonstrate the capability of aberration-corrected HAADF-STEM for atomic-resolution elemental mapping in InxGa1-xAs multilayer structures.
To validate the accuracy of compositional profiles obtained from HAADF-STEM images against established segregation models.

Main Methods:

Utilizing 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM).
Analyzing HAADF-STEM images to generate elemental compositional maps and profiles.
Comparing experimental compositional profiles with Muraki's segregation model.

Main Results:

Achieved atomic-column resolution elemental compositional maps and profiles across an InxGa1-xAs multilayer.
Demonstrated accurate mapping of indium (In) distribution within the multilayer structure.
Observed good agreement between experimental results and Muraki's segregation model.

Conclusions:

Aberration-corrected HAADF-STEM is a powerful technique for atomic-resolution compositional analysis of semiconductor multilayers.
The study validates the accuracy of HAADF-STEM for characterizing indium segregation in InxGa1-xAs systems.
This methodology provides insights into material growth and electronic properties of quantum well structures.