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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Valley-dependent Brewster angles and Goos-Hänchen effect in strained graphene

Zhenhua Wu1, F Zhai, F M Peeters

  • 1SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China.

Physical Review Letters
|June 4, 2011
PubMed

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