Related Experiment Video

Updated: Jun 1, 2026

Spectral and Angle-Resolved Magneto-Optical Characterization of Photonic Nanostructures
08:01

Spectral and Angle-Resolved Magneto-Optical Characterization of Photonic Nanostructures

Published on: November 21, 2019

Long-range channel plasmon polaritons in thin metal film V-grooves

Sangjun Lee1, Sangin Kim

  • 1School of Electrical and Computer Engineering, Ajou University, Suwon 443-749, South Korea.

Optics Express
|June 7, 2011
PubMed

More Related Videos

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons07:39

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

Published on: July 21, 2018

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires09:00

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Electric Field of Parallel Conducting Plates01:16

Electric Field of Parallel Conducting Plates

Gauss' law relates the electric flux through a closed surface to the net charge enclosed by that surface. Gauss's law can be applied to find the electric field and the charge enclosed in a region depending on its charge distribution.
Consider a cross-section of a thin, infinite conducting plate having a positive charge. For such a large thin plate, as the thickness of the plate tends to zero, the positive charges lie on the plate's two large faces. Without an external electric field, the...