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36 GHz submicron silicon waveguide germanium photodetector
Shirong Liao1, Ning-Ning Feng, Dazeng Feng
1Kotura Inc, 2630 Corporate Place, Monterey Park, CA 91754, USA. sliao@kotura.com
Optics Express
|June 7, 2011
Summary
We improved germanium photodetector responsivity by optimizing germanium thickness and contact placement. This enhances performance for high-speed silicon-on-insulator (SOI) photonic applications.
Area of Science:
- Photonics and Optoelectronics
- Semiconductor Devices
- Integrated Optics
Background:
- High-speed germanium (Ge) photodetectors are crucial for optical communication.
- Poor responsivity in waveguide-based Ge photodetectors limits their performance.
- Metal absorption from top contacts is a primary cause of reduced responsivity.
Purpose of the Study:
- To enhance the responsivity of waveguide-based Ge photodetectors.
- To investigate methods for overcoming metal absorption losses.
- To optimize Ge photodetector design for high-speed silicon-on-insulator (SOI) platforms.
Main Methods:
- Optimizing germanium layer thickness.
- Implementing offset contact windows to reduce metal absorption.
- Designing wider devices with double offset contacts.
Main Results:
- Responsivity improved from 0.6 A/W to 0.95 A/W at 1550 nm with a 36 GHz bandwidth.
- A wider device design achieved 1.05 A/W responsivity at 1550 nm with a 20 GHz bandwidth.
- Demonstrated effective mitigation of metal absorption through structural optimization.
Conclusions:
- Optimized Ge thickness and contact placement significantly boost photodetector responsivity.
- Offset contact strategies are effective in reducing metal absorption losses.
- The developed techniques enable higher performance Ge photodetectors for integrated photonic circuits.
