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Updated: Jun 1, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Yongsung Ji1, Sangchul Lee, Byungjin Cho
1School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.
Flexible organic resistive memory devices using multilayer graphene electrodes exhibit write-once-read-many (WORM) characteristics. These devices maintain stable performance under bending, demonstrating excellent uniformity and a high ON/OFF ratio.
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