Related Experiment Video
Updated: Jun 1, 2026
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Ti-doped indium tin oxide thin films for transparent field-effect transistors: control of charge-carrier density and
Ji-In Kim1, Kwang Hwan Ji, Mi Jang
1Department of Materials Science and Engineering, Inha University, Incheon 402-751, Korea.
Abstract:
Indium tin oxide (ITO) films are representative transparent conducting oxide media for organic light-emitting diodes, liquid crystal displays, and solar cell applications. Extending the utility of ITO films from passive electrodes to active channel layers in transparent field-effect transistors (FETs), however, has been largely limited because of the materials' high carrier density (>1 × 10(20) cm(-3)), wide band gap, and polycrystalline structure. Here, we demonstrate that control over the cation composition in ITO-based oxide films via solid doping of titanium (Ti) can optimize the carrier concentration and suppress film crystallization. On 120 nm thick SiO(2)/Mo (200 nm)/glass substrates, transparent n-type FETs prepared with 4 at % Ti-doped ITO films and fabricated via the cosputtering of ITO and TiO(2) exhibited high electron mobilities of 13.4 cm(2) V(-1) s(-1), a low subthreshold gate swing of 0.25 V decade(-1), and a high I(on/)I(off) ratio of >1 × 10(8).
