Related Experiment Video
Updated: Jun 1, 2026
08:07
Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
Published on: June 18, 2013
Growth direction modulation and diameter-dependent mobility in InN nanowires
Goutam Koley1, Zhihua Cai, Ehtesham Bin Quddus
1Department of Electrical Engineering and Nanocenter, University of South Carolina, Columbia, SC 29208, USA. koley@engr.sc.edu
Nanotechnology
|June 16, 2011
Summary
Electrical properties of Indium Nitride nanowires (InN NWs) improve as diameter decreases. This study investigated InN NWs, revealing size-dependent conductivity and mobility linked to surface and core conduction.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Indium Nitride (InN) nanowires (NWs) are promising nanomaterials for electronic applications.
- Understanding their electrical properties is crucial for device optimization.
- Diameter-dependent characteristics are not fully elucidated.
Purpose of the Study:
- To investigate the diameter-dependent electrical properties of InN NWs.
- To explore the relationship between InN NW dimensions and their electronic behavior.
- To model the underlying mechanisms for observed property variations.
Main Methods:
- Growth of InN nanowires (NWs) using chemical vapor deposition (CVD).
- Fabrication and characterization of InN NW-based back-gated field-effect transistors (FETs).
- Analysis of electrical properties including conductance and carrier mobility.
- Modeling of conduction paths considering surface and core effects.
Main Results:
- InN NWs exhibited unique coplanar deflection behaviors.
- FETs demonstrated excellent gate control and current saturation.
- Both NW conductance and carrier mobility increased with decreasing diameter.
- Observed variations were successfully modeled by considering surface and core conduction.
Conclusions:
- The electrical properties of InN NWs are strongly dependent on their diameter.
- Surface and core conduction mechanisms play a significant role in carrier transport.
- These findings provide insights for designing InN NW-based electronic devices.
