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Updated: May 31, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
High on/off ratios in bilayer graphene field effect transistors realized by surface dopants
B N Szafranek1, D Schall, M Otto
1Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Strasse 25, 52074 Aachen, Germany. szafranek@amo.de
Abstract:
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic, and sensor applications. So far the operation of bilayer graphene-based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper, we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping. The adsorbate dopants on the upper side of the graphene establish a displacement field perpendicular to the graphene surface breaking the inversion symmetry of the two graphene layers. Low-temperature measurements indicate that the increased on/off ratio is caused by the opening of a mobility gap.
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