Characterization of initial halogen adsorption on Si(111) surface by scanning tunnelling microscopy: correlation with...

Initial adsorption processes of halogen atoms on a Si(111)-(7 × 7) surface were studied by means of scanning tunnelling microscopy (STM). The adsorption sites of halogen atoms were clarified directly with STM, and the results were compared with the partial coverage at each site, estimated previously from surface differential reflectance and thermal desorption spectroscopic analyses. The microscopic geometry of the atomic structure showed a good correspondence with the optical measurements, especially in terms of the density of the reacted sites. Bromine atoms were predominantly adsorbed near already adsorbed bromine, while chlorine atoms were almost randomly adsorbed. Polybromide formation occurred at coverage levels above 0.1 ML. Bromine atoms break the back-bonds of Si adatoms at lower levels of coverage than do chlorine atoms. The reason for the difference in adsorption behaviour between chlorine and bromine is discussed.