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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Generation of defects in amorphous SiO(2) assisted by two-step absorption on impurity sites

F Messina1, M Cannas, R Boscaino

  • 1Dipartimento di Scienze Fisiche ed Astronomiche, Università di Palermo, Via Archirafi 36, I-90123 Palermo, Italy.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|June 23, 2011
PubMed

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