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Transport spectroscopy of single Pt impurities in silicon using Schottky barrier MOSFETs

L E Calvet1, W Wernsdorfer, J P Snyder

  • 1Institut d'Electronique Fondamentale-CNRS UMR 8622, Université Paris-Sud, 91405 Orsay, France.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|June 23, 2011
PubMed

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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...