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Published on: April 12, 2019
Comparison of n-type Gd(2)O(3) and Gd-doped HfO(2)
Ya B Losovyj1, David Wooten, Juan Colon Santana
1Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, PO Box 880111, Lincoln, NE 68588-0111, USA. Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, LA 70806, USA.
Abstract:
Gd(2)O(3) and Gd-doped HfO(2) films were deposited on p-type silicon substrates in a reducing atmosphere. Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valence band maximum have been identified using the resonant photoemission of Gd(2)O(3) and Gd-doped HfO(2) films, respectively. In the case of Gd(2)O(3), strong hybridization with the O 2p band is demonstrated, and there is evidence that the Gd 4f weighted band exhibits dispersion in the bulk band structure. The rectifying (diode-like) properties of Gd-doped HfO(2)-silicon and Gd(2)O(3)-silicon heterojunctions are demonstrated.
