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Updated: May 31, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

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Published on: June 3, 2015

42.7 Gbit/s electro-optic modulator in silicon technology.

L Alloatti1, D Korn, R Palmer

  • 1Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany. luca.alloatti@kit.edu

Optics Express
|July 1, 2011
PubMed
Summary
This summary is machine-generated.

Silicon-organic hybrid modulators achieve low voltage and high-speed data encoding. This technology uses a silicon waveguide with organic cladding, enabling future high-performance photonic transceivers.

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A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
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Area of Science:

  • Photonics and Materials Science
  • Integrated Optics
  • Semiconductor Device Physics

Background:

  • CMOS-compatible optical modulators are essential for silicon-based photonic transceivers.
  • Current challenges include achieving low modulation voltage and high-speed operation.
  • The silicon-organic hybrid (SOH) platform offers a promising solution by integrating silicon photonics with organic electro-optic materials.

Purpose of the Study:

  • To demonstrate data encoding using a silicon-organic hybrid (SOH) electro-optic modulator.
  • To introduce a novel electrode approach using a highly conductive electron accumulation layer for SOH modulators.
  • To evaluate the performance of the SOH modulator in terms of data rate and signal integrity.

Main Methods:

  • Fabrication of a silicon-organic hybrid (SOH) electro-optic modulator.
  • Implementation of a highly conductive electron accumulation layer induced by a DC gate voltage for electrode functionality.
  • Testing the modulator's data encoding capabilities at a data rate of 42.7 Gbit/s.
  • Analysis of eye diagrams and frequency response for performance assessment.

Main Results:

  • Successful demonstration of data encoding with an SOH electro-optic modulator.
  • Achieved a data rate of 42.7 Gbit/s with widely open eye diagrams, indicating high signal quality.
  • The electron accumulation layer provided optically transparent and highly conductive electrodes without impurity scattering.
  • Frequency response measurements suggest potential for even higher data rates.

Conclusions:

  • The developed SOH electro-optic modulator effectively addresses the need for low voltage and high-speed operation in photonic transceivers.
  • The novel electrode approach using an electron accumulation layer is a viable method for SOH device integration.
  • The demonstrated performance indicates the significant potential of SOH technology for next-generation optical communication systems.