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Suppressing sidewall photon leakage in ultra-small Micro-LEDs via omnidirectional reflector integration
Optics Express
|August 14, 2026
Summary
Omnidirectional reflectors (ODRs) boost photon management in Gallium Nitride (GaN)-based Micro-Light Emitting Diodes (Micro-LEDs). This integration significantly enhances external quantum efficiency (EQE) in ultra-small devices.
Area of Science:
- Optoelectronics
- Materials Science
- Nanotechnology
Background:
- Micrometer-scale Micro-LEDs face challenges with conventional reflectors like distributed Bragg reflectors (DBRs) due to performance degradation under varying conditions.
- Light extraction efficiency is limited in small GaN-based Micro-LEDs by sidewall thickness variations and oblique photon incidence.
Purpose of the Study:
- To investigate the integration of omnidirectional reflectors (ODRs) into GaN-based Micro-LEDs.
- To enhance photon management and external quantum efficiency (EQE) in ultra-small Micro-LED devices.
Main Methods:
- Simulations were used to evaluate ODR performance under sidewall thickness variation and wide-angle incidence.
- Experimental integration of ODRs into 2 μm lateral size GaN-based Micro-LEDs.
Main Results:
- ODRs demonstrated maintained high reflectance under varying sidewall thickness and wide-angle incidence, unlike DBRs.
- Micro-LEDs with ODRs achieved a peak EQE of 42.3%, a significant increase from 25.6% without an optical reflector.
- ODR integration resulted in a 67% relative improvement in EQE and maintained stable electrical characteristics across a broad current density range.
Conclusions:
- ODR integration is a scalable and practical strategy for improving photon extraction in ultra-small GaN-based Micro-LEDs.
- The enhanced photon management and EQE have direct implications for the development of high-resolution micro-display applications.

