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Updated: May 31, 2026
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Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
Published on: August 8, 2025
Defect-mediated resonance shift of silicon-on-insulator racetrack resonators
J J Ackert1, J K Doylend, D F Logan
1Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4L7, Canada. ackertjj@mcmaster.ca
Optics Express
|July 1, 2011
Summary
We demonstrate how ion implantation and annealing can permanently tune Silicon-On-Insulator racetrack resonators. This method modifies refractive index and reduces optical loss, offering precise control over resonator characteristics.
Area of Science:
- Materials Science
- Optical Engineering
- Semiconductor Physics
Background:
- Silicon-On-Insulator (SOI) racetrack resonators are key components in integrated photonics.
- Controlling optical properties of these resonators is crucial for device performance.
- Defect engineering offers a pathway to modify material and optical characteristics.
Purpose of the Study:
- To investigate the impact of inert ion implantation on SOI racetrack resonators.
- To explore the effects of post-implantation annealing on resonator properties.
- To establish a method for permanent tuning of resonator characteristics.
Main Methods:
- Selective ion implantation was employed to introduce deep-level defects.
- Resonant wavelength and round-trip loss were measured across annealing temperatures (100-300 °C).
- Changes in refractive index and optical loss were analyzed post-implantation and annealing.
Main Results:
- A total resonance wavelength shift of ~2.9 nm was achieved, corresponding to a 0.02 increase in refractive index.
- Excess optical loss increased to 301 dB/cm post-implantation, reduced to 35 dB/cm after annealing.
- Annealing induced a recovery of the refractive index towards the pre-implanted state.
Conclusions:
- Ion implantation and subsequent annealing provide a viable method for permanent tuning of SOI racetrack resonators.
- This technique offers precise control over optical properties, including refractive index and loss.
- The findings are valuable for applications requiring defect engineering in resonant optical structures.
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