Related Experiment Video
Updated: May 31, 2026

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
Published on: July 21, 2018
Surface plasmon polariton amplification in metal-semiconductor structures.
Dmitry Yu Fedyanin1, Aleksey V Arsenin
1Laboratory of Nanooptics and Femtosecond Electronics, Department of General Physics, Moscow Institute of Physics and Technology (State University), 9, Institutsky lane, Dolgoprudny, 141700, Russia. feddu@mail.ru
We developed a new method for amplifying surface plasmon polaritons (SPPs) using electrical pumping in a Schottky diode. This compact device enables integrated plasmonic circuits and potential surface plasmon lasing.
Area of Science:
- Photonics and Plasmonics
- Semiconductor Devices
- Optoelectronics
Background:
- Surface plasmon polaritons (SPPs) are crucial for nanoscale light manipulation.
- Existing SPP amplification methods often rely on bulky optical pumping.
- Integration of SPP devices into compact circuits remains a challenge.
Purpose of the Study:
- To propose and investigate a novel scheme for SPP amplification.
- To enable compact and electrically pumped SPP amplifiers.
- To explore the potential for surface plasmon lasing.
Main Methods:
- Utilizing minority carrier injection in a Schottky diode structure.
- Implementing a compact, planar amplifier design.
- Investigating electrical pumping as an alternative to optical pumping.
Main Results:
- Demonstrated a novel scheme for SPP amplification.
- Achieved amplification using compact electrical pumping.
- Proposed a planar structure suitable for integrated plasmonic circuits.
Conclusions:
- The proposed Schottky diode-based SPP amplifier offers a compact and efficient solution.
- Electrical pumping simplifies device architecture and integration.
- This technique paves the way for integrated plasmonic circuits and surface plasmon lasers.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

