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Updated: May 31, 2026
07:03
Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
Multi-ferroic and magnetoelectric materials and interfaces.
J P Velev1, S S Jaswal, E Y Tsymbal
1Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588-0299, USA.
Summary
Multi-ferroic (MF) and magnetoelectric (ME) materials enable new electronic devices. Advances in fabrication enhance couplings between ferroic orders in engineered structures, overcoming previous limitations.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Multiple ferroic orders and their couplings are known but historically weak in single-phase materials.
- Fabrication advances enable lower-dimensional and compound structures, enhancing these couplings.
- Miniaturization limits in electronics drive the need for multi-functional materials.
Purpose of the Study:
- To review the field of multi-ferroic (MF) and magnetoelectric (ME) materials.
- To highlight electronic effects at interfaces and in tunnel junctions.
- To discuss the potential of MF and ME materials for future electronics.
Main Methods:
- Review of recent advances in materials fabrication for MF and ME systems.
- Analysis of coupling mechanisms in engineered heterostructures and low-dimensional materials.
- Focus on electronic phenomena at magnetoelectric interfaces and multi-ferroic tunnel junctions.
Main Results:
- Engineered materials in lower dimensions and heterostructures significantly enhance ferroic order coupling.
- New degrees of freedom in designed materials allow for stronger MF and ME effects.
- Electronic effects at interfaces are crucial for device applications.
Conclusions:
- Multi-ferroic and magnetoelectric materials offer a pathway to overcome miniaturization limits in electronics.
- Engineered interfaces and tunnel junctions are key platforms for exploiting MF and ME effects.
- These materials promise new device functionalities for increased computing power and storage.
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