Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes

Related Experiment Video

Updated: May 31, 2026

Microfluidic Platform with Multiplexed Electronic Detection for Spatial Tracking of Particles
11:54

Microfluidic Platform with Multiplexed Electronic Detection for Spatial Tracking of Particles

Published on: March 13, 2017

Philip J Kuekes1, Warren Robinett, Ron M Roth

  • 1Hewlett-Packard Laboratories, Palo Alto, CA 94304, USA.

Nanotechnology
|July 6, 2011
PubMed

More Related Videos

Autonomous and Rechargeable Microneurostimulator Endoscopically Implantable into the Submucosa08:17

Autonomous and Rechargeable Microneurostimulator Endoscopically Implantable into the Submucosa

Published on: September 27, 2018

Design and Synthesis of a Reconfigurable DNA Accordion Rack07:44

Design and Synthesis of a Reconfigurable DNA Accordion Rack

Published on: August 15, 2018

Related Concept Videos

Combination Of Resistors01:18

Combination Of Resistors

Electrical devices in any circuit can be connected either by series or parallel connections. Additionally, circuits can be connected involving both of these connections, known as combination or complex circuits. As these circuits have complex resistor connections, it is necessary to identify different parts as either series or parallel connections, then the whole combination of series and parallel resistors can be reduced to a single equivalent resistance. With the known equivalent resistance...
Resistors In Parallel01:23

Resistors In Parallel

Resistors are in parallel when one end of all the resistors are connected to a continuous wire of negligible resistance and the other end of all the resistors are also connected to one another through a continuous wire of negligible resistance. In the case of a parallel configuration, the potential drop across each resistor is the same. Current through each resistor can be found using Ohm’s law, I = V/R, where the voltage is constant across each resistor. The sum of the individual currents...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
Resistors In Series01:10

Resistors In Series

A resistor is an ohmic device that limits the flow of charge in a circuit. Most circuits have more than one resistor. If several resistors are connected together and connected to a battery, the current supplied by the battery depends on the equivalent resistance of the circuit. The equivalent resistance of a combination of resistors depends on both their individual values and how they are connected. The simplest combination of resistors is the series combination.
In a series circuit, the...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...