Related Experiment Video
Updated: May 31, 2026

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
Published on: November 5, 2014
Thermally assisted tunnelling in ambipolar field-effect transistors based on fullerene peapod bundles
Ao Guo1, Yunyi Fu, Lunhui Guan
1Department of Microelectronics, Peking University, Beijing 100871, People's Republic of China. Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, People's Republic of China.
Abstract:
We report the first detailed studies of the electrical transport behaviour of C(70) fullerene peapod bundles at various temperatures from 400 K down to 4 K. With electrical breakdown, we have prepared ambipolar (i.e. both p- and n-type) field-effect transistors (FETs) using fullerene peapod bundles with high levels of performance. This paper focuses on the role of the Schottky barrier and the thermal activation energy in the transport behaviour of fullerene bundles. The temperature dependence of our measurements reveals that transport is dominated by thermally assisted tunnelling in fullerene bundles at low temperature.
Related Concept Videos
Field Effect Transistor
P-N junction

