Self-assembled Al(x)Ga(1-x)N nanorods grown on Si(001) substrates by using plasma-assisted molecular beam epitaxy

Hexagonal Al(x)Ga(1-x)N nanorods were grown by plasma-assisted molecular beam epitaxy (PAMBE) on Si(001) substrates. The Al mole fraction was determined from x-ray diffraction (XRD) measurement and its value was varied from 0 to 15. It is found that, under group III-rich conditions, the growth rate of the Al(x)Ga(1-x)N nanorods decreases and the diameter increases due to the possibility of incorporation of aluminium and gallium. In order to study structural and optical properties, x-ray diffraction and cathodoluminescence (CL) measurements were carried out. The Al content (x) is calculated from these measurements and their values are compared.