Room-temperature single-electron transistors using alkanedithiols

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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Kang Luo1, Dong-Hun Chae, Zhen Yao

  • 1Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA. Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin, TX 78712, USA. Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA.

Nanotechnology
|July 7, 2011
PubMed

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