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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Kang Luo1, Dong-Hun Chae, Zhen Yao
1Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA. Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin, TX 78712, USA. Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA.
Researchers created single-electron transistors using molecular self-assembly. These devices enable room-temperature observation of single-electron tunneling and molecular vibrations at low temperatures.
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