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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Bridge rectifier01:24

Bridge rectifier

The bridge rectifier is essential in electronics for efficiently converting alternating current (AC) to direct current (DC). Comprised of four diodes configured in a bridge layout, this rectifier effectively processes both the positive and negative halves of the AC waveform, making it superior to half-wave and full-wave center-tapped rectifiers in terms of voltage regulation and output stability.
Operationally, the bridge rectifier allows current flow through two of its diodes during each...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Updated: May 31, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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Published on: August 2, 2019

Gate-controlled rectifying barrier in a two-dimensional hole gas.

R Sordan1, A Miranda, J Osmond

  • 1L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, I-22100 Como, Italy.

Nanotechnology
|July 7, 2011
PubMed
Summary
This summary is machine-generated.

This study demonstrates current rectification in low-dimensional conductors using a gate-controlled asymmetric barrier. This novel approach achieves high forward-to-reverse current ratios, offering an alternative to conventional diodes.

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Area of Science:

  • Solid State Physics
  • Materials Science
  • Nanotechnology

Background:

  • Low-dimensional conductors exhibit unique electronic properties.
  • Schottky barriers are crucial for diode functionality.
  • Controlling device function independent of material properties is a key challenge.

Purpose of the Study:

  • To demonstrate current rectification in homogeneous low-dimensional conductors.
  • To utilize a gate-controlled asymmetric barrier for rectification.
  • To achieve simple external control over device function.

Main Methods:

  • Fabrication of a nanofabricated nonequipotential gate.
  • Varying the gate potential to control barrier shape.
  • Measuring the current flow through the conductor.

Main Results:

  • Successful rectification of current in the conductor.
  • Achieved a forward-to-reverse current ratio exceeding 10^4.
  • Demonstrated external control of device function via gate potential.

Conclusions:

  • Gate-controlled asymmetric barriers can effectively rectify current in low-dimensional conductors.
  • This method offers advantages over conventional diode fabrication.
  • The device's function is tunable by external gate voltage, independent of material choice.