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Temperature field analysis of single layer TiO2 film components induced by long-pulse and short-pulse lasers
Bin Wang1, Hongchao Zhang, Yuan Qin
1School of Science, Nanjing University of Science & Technology, Nanjing 210094, China. wangbin0108@gmail.com
Abstract:
To study the differences between the damaging of thin film components induced by long-pulse and short-pulse lasers, a model of single layer TiO(2) film components with platinum high-absorptance inclusions was established. The temperature rises of TiO(2) films with inclusions of different sizes and different depths induced by a 1 ms long-pulse and a 10 ns short-pulse lasers were analyzed based on temperature field theory. The results show that there is a radius range of inclusions that corresponds to high temperature rises. Short-pulse lasers are more sensitive to high-absorptance inclusions and long-pulse lasers are more easily damage the substrate. The first-damage decision method is drawn from calculations.

