Related Experiment Video
Updated: May 31, 2026

11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Direct growth of graphene pad on exfoliated hexagonal boron nitride surface
Minhyeok Son1, Hyunseob Lim, Misun Hong
1Department of Chemistry and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam-Gu, Pohang, 790-784, Korea.
Nanoscale
|July 19, 2011
Abstract:
A direct and metal layer-free growth of flat graphene pads on exfoliated hexagonal boron nitride substrate (h-BN) are demonstrated by atmospheric chemical vapour deposition (CVD) process. Round shape with high flatness graphene pads are grown in high yield (∼95%) with a pad thickness of ∼0.5 nm and homogenous diameter.

