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STM-induced surface aggregates on metals and oxidized silicon
Dominik Stöffler1, Hilbert V Löhneysen, Regina Hoffmann
1Karlsruhe Institute of Technology - Campus South, DFG-Center for Functional Nanostructures (CFN), Physikalisches Institut, D-76128 Karlsruhe, Germany. dominik.stoeffler@kit.edu
Nanoscale
|July 20, 2011
Summary
Carbon material aggregates on platinum and silicon surfaces during scanning tunneling microscopy (STM) experiments. Material accumulation increases with STM scans and voltage, forming films up to 10 nm thick.
Area of Science:
- Surface science
- Materials science
- Nanotechnology
Background:
- Scanning tunneling microscopy (STM) is a powerful tool for surface analysis.
- Contamination during UHV experiments can affect results.
- E-beam lithography is used for surface structuring.
Purpose of the Study:
- To investigate the aggregation of carbonaceous material on surfaces during STM analysis.
- To understand the factors influencing this aggregation process.
Main Methods:
- Experiments conducted in ultra-high vacuum (UHV).
- Utilized scanning tunneling microscopy (STM) for imaging and analysis.
- Employed scanning electron microscopy (SEM) for complementary imaging.
- Investigated solvent-cleaned, e-beam patterned platinum and silicon surfaces.
Main Results:
- Observed aggregation of carbon or carbon derivatives on Pt and Si surfaces.
- Material accumulation increased with the number of STM scans.
- Higher tunneling voltages led to increased aggregation.
- Film thicknesses up to 10 nm were achieved after multiple scans.
Conclusions:
- STM operation, particularly with higher voltages and repeated scanning, can induce carbonaceous material aggregation.
- This phenomenon represents a potential source of contamination in UHV surface science studies.
- Careful consideration of experimental parameters is necessary to mitigate unwanted material deposition.
